BZT52C10

BZT52C2V4 - 43 ZENER DIODES FEATURES Planar Die Construction  350mW Power Dissipation on Ceramic PCB  eneral Purpose, Medium Current  Ideally Suited for Automated Assembly Processes  — SOD-123 MECHANICAL DATA Case: SOD-123 Molded Plastic  Terminals: Solderable per MIL-STD-202,Method 208  Polarity: Cathode Band  Weight: 0.01 grams (approx.)  10 Cathode MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Forward Voltage (Note 2) @ IF = 10mA VF 0.9 V Power Dissipation(Note 1) PD 350 mW Thermal Resistance, Junction to Ambient Air RθJ 357 °C /W TJ 1 50 °C Tj ,T S T -65~ +150 Junction Temperature Operating and Storage Temperature Range °C 2 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2. Short duration test pulse used to minimize self-heating effect 3. f=1KHZ ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1/5 BZT52C2V4 - 43 ZENER DIODES ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Type Zener Voltage Range (Note 2) Maximum Maximum Zener Impedance Reverse (Note 3) Current Number (Note 2) VZ @I ZT IZT Nom(V) Min(V) Max(V) mA ZZT @IZT ZZK @IZK IZK Ω Typical Test Temperature Current Coefficent IZTC @IZTC mV/°C IR VR mA uA V Min Max mA BZT52C2V4 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5 Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 2. Short duration test pulse used to minimize self-heating effect 3. f=1KHZ ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2/5 BZT52C2V4 - 43 ZENER DIODES Typical Characteristics 0.6 50 IZ, ZENER CURRENT (mA) PD, POWER DISSIPATION (W) C2V7 C3V9 C3V3 0.5 0.4 0.3 0.2 0.1 0 Tj = 25°C 40 C5V6 C4V7 C6V8 C6V2 C8V2 30 20 10 Test Current IZ 5.0mA 0 0 25 75 50 100 125 150 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 30 Tj = 25°C 10 C10 2 10 C39 Tj = 25°C IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) C12 C15 20 C18 C22 10 0 Test current IZ 2mA C27 Test current IZ 5mA 0 C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 8 6 4 Test Current IZ 2mA 2 40 0 10 20 30 40 50 60 70 80 90 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 100 1000 Tj = 25 °C f = 1MHz CT, TOTAL CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Total Capacitance vs Nominal Zener Voltage ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3/5 BZT52C2V4 - 43 ZENER DIODES SOD-123 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 D 1.500 1.700 0.059 0.067 E 2.600 2.800 0.102 0.110 E1 3.550 3.850 0.140 0.152 L 0.500 RE F 0.020 RE F L1 0.250 0.450 0.010 0.018 θ 0° 8° 0° 8° ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/5 BZT52C2V4 - 43 ZENER DIODES SOD-123 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOD-123 1.85 3.94 1.57 φ1.55 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.05 ±0.05 ±0.05 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 +0.3\-0.1 SOD-123 Tape Leader and Traller SOD-123 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 φ178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 5/5