BZT52C7V5S

SOD-323 Plastic-Encapsulate Diodes PINNING ZENER DIODE FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol Maximum Ratings (Ta=25℃ unless otherwise specified ) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal ResistanceIURP Junction to Ambient -XQFWLRQTemperature Storage Temperature Range Symbol Value Unit VF 0.9 V PD 200 mW RθJA 625 ℃/W ℃ 150 T j TVWJ -5~+150 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. ℃ Electrical Characteristics(Ta = 25℃ unless otherwise specified ) Maximum Typical Maximum Zener Impedance Reverse Temperature (Note 3) Current Coefficient (Note 2) @IZTC mV/℃ Test Zener Voltage Range (Note 2) TYPE Current IZTC Marking VZ@IZT IZT Nom(V) Min(V) Max(V) (mA) ZZT@IZT ZZK@IZK Ω IZK IR VR (mA) μA V Min Max mA BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 Notes:1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 . 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Zener Characteristics(11 V to 39 V) Zener Characteristics(VZ Up to 10 V) 100 100 Ta =25℃ Ta =25℃ Pulsed 10 36 39 33 30 27 24 20 18 38 0.5 0.5 1 2 3 4 5 6 7 8 9 10 10 11 12 14 16 18 VZ, ZENER VOLTAGE (V) 20 22 24 26 28 30 32 34 Temperature Coefficients Typical Leakage Current TYPICAL Ta VALUES 35 FOR BZT52C2V4S SERIES 10 IR, LEAKAGE CURRENT (uA) 30 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 1E-4 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 0 40 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 35 40 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta =25℃ IZ(AC)=0.1IZ(DC) IZ=1mA f=1kHz 100 ZZT, DYNAMIC IMPEDANCE(Ω) 0V BIAS 1V BIAS BIAS AT 50% OF VZ NOM 10 100 5mA 10 1 1 1 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) 10 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 250 200 PD (mW) 42 100 -5 POWER DISSIPATION 40 VZ, ZENER VOLTAGE (V) 40 C, CAPACITANCE (pF) 36 1 1 θVZ, TEMPERATURE COEFFICIENT (mV/℃) 22 PD =200mW 11 12 13 10 9.1 7.5 8.2 6.2 6.8 5.6 4.7 5.1 10 15 IZ, ZENER CURRENT (mA) PD =200mW 2.4 IZ, ZENER CURRENT (mA) Pulsed 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 100 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.