MMBTSC3356-3G

NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. HFE MARKING Q R23 R R24 S R25 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O C Storage Temperature Range TS - 65 to + 150 O C Parameter Characteristics (Ta = 25 C) O Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE 50 80 125 - 100 160 250 - Collector Cutoff Current at VCB = 10 V ICBO - - 1 µA Emitter Cutoff Current at VEB = 1 V IEBO - - 1 µA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA fT - 3 - GHz Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Cre1) - 0.55 1 pF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz NF - 1.1 2 dB DC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Q R S 1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.