MMBT5401T

SOT-523 Plastic-Encapsulate Transistors MMBT5401T TRANSISTOR ( PNP) SOT–523 FEATURES  Complementary to MMBT5551W  Small Surface Mount Package  Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V, IC=0 -50 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=-5V, IC=-1mA 50 VCE=-5V, IC=-10mA 60 VCE=-5V, IC=-50mA 50 300 IC=-50mA, IB=-5mA -0.5 V IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -1 V IC=-10mA, IB=-1mA -1 V VCE=-10V,IC=-10mA , f=100MHz VCB=-10V, IE=0, f=1MHz 1 100 MHz 6 pF Typical Characteristics h Static Characteristic -20 COMMON EMITTER Ta=25℃ -0.08mA -12 -0.07mA -10 -0.06mA -8 -0.05mA FE -0.09mA -14 h -16 -0.04mA -6 -0.02mA -2 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat -1000 —— -6 VCE -7 Ta=25℃ -1 -10 COLLECTOR CURRENT IC VCEsat -10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 150 (V) β=10 Ta=25℃ -600 T a=100℃ -400 -1 Ta=100℃ 200 0 -8 -800 -200 250 50 IB=-0.01mA -0 300 100 -0.03mA -4 -10 -100 —— VBE T (mA) C I TRANSITION FREQUENCY f COLLECTOR CURRENT Ta=25℃ -1 -400 -600 -800 -1 -10 fT -1000 Cob/ibC —— —— Ta=25℃ 100 10 1 -1 -1200 IC COMMON EMITTER VCE = -10V -10 BASE-EMMITER VOLTAGE VBE(mV) 100 -200 Ta =25℃ 1000 -10 -0.1 -200 -100 IC COLLECTOR CURRENT I (mA) C COMMON EMITTER VCE =-5V Ta=100℃ -200 Ta=100℃ -0.1 (MHz) -100 IC -100 (mA) -1 -0.01 -200 —— IC β=10 COLLECTOR CURRENT I (mA) C -200 IC COMMON EMITTER VCE =-5V 350 -0.1mA DC CURRENT GAIN COLLECTOR CURRENT IC(mA) -18 —— FE 400 -70 COLLECTOR CURRENT VCB /V EB PC 250 —— T IC (mA) a f=1MHz IE=0/I C=0 COLLECTOR POWER DISSIPATION PC(mW) Ta=25℃ CAPACITANCE C (pF) Cib 10 1 -0.1 Cob -1 -10 200 150 100 50 0 -35 REVERSE VOLTAGE V (V) 0 25 50 75 100 AMBIENT TEMPERATURE T (℃) a 2 125 150 3