MMBTSA1576W

Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-323 FEATURES z Excellent hFE linearity z Complements the 2SC4081 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W -55～+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 120 560 IC=-50mA,IB=-5mA -0.5 VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz 140 MHz 4 5 CLASSIFICATION OF hFE Rank Range Marking Q R S 120-270 180-390 270-560 FQ FR FS 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V pF Typical Characteristics Static Characteristic -7 hFE Ta=100℃ -16uA DC CURRENT GAIN (mA) IC -18uA -14uA COLLECTOR CURRENT IC —— COMMON EMITTER Ta=25℃ -20uA -6 -5 hFE 1000 -4 -12uA -10uA -3 -8uA -6uA -2 Ta=25℃ 100 -4uA -1 COMMON EMITTER VCE= -6V IB=-2uA -0 10 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat —— -10 VCE -12 -1 -10 -100 -150 COLLECTOR CURRENT (V) VBEsat —— IC -300 IC (mA) IC -1000 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 -200 Ta=100℃ -100 Ta=25℃ -0 -1 -10 -100 COLLECTOR CURRENT Cob / Cib —— IC Ta=25℃ -600 Ta=100℃ -400 -200 -0.1 -150 -1 -10 COLLECTOR CURRENT (mA) fT VCB / VEB 1000 50 —— -100 -150 IC (mA) IC (MHz) f=1MHz IE=0 / IC=0 10 TRANSITION FREQUENCY (pF) fT Ta=25℃ Cib CAPACITANCE C -800 Cob 100 VCE=-12V Ta=25℃ 10 1 -0.1 -1 -10 REVERSE BIAS VOLTAGE PC COLLECTOR POWER DISSIPATION PC (mW) 250 —— V -20 -1 IC Ta 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 -30 -10 COLLECTOR CURRENT (V) 150 (℃ ) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. (mA) SOT-323 Package Outline Dimensions 3 of 3 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd.