MMBT5451DW

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP)                   6 5          FEATURES Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)  z  4 1 2 3 MRKING:KNM  unless otherwise noted) MAXIMUM RATINGS NPN 5551 (Ta=25 Symbol Parameter Value Units VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W R©JA Thermal Resistance, Junction to Ambient 625 /W TJ Junction Temperature 150  Tstg Storage Temperature -55-150  ELECTRICAL CHARACTERISTICS NPN 5551 (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 0.05 A Emitter cut-off current IEBO VEB=4V,IC=0 0.05 A hFE1 VCE=5V,IC=1mA 80 hFE2 VCE=5V,IC=10mA 100 hFE3 VCE=5V,IC=50mA 30 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure VCE(sat) VBE(sat) Cobo fT NF 300 IC=10mA, IB=1mA 0.15 V IC=50mA, IB=5mA 0.2 V IC=10mA, IB=1mA 1 V IC=50mA, IB=5mA 1 V 6.0 pF 300 MHz 8.0 dB VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 10mA, f = 100MHz 100 VCE= 5.0V, IC = 200μA, RS = 1.0k¡f = 1.0kHz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MAXIMUM RATINGS PNP 5401 (Ta=25  unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W R©JA Thermal Resistance, Junction to Ambient 625 /W TJ Junction Temperature 150  Tstg Storage Temperature -55-150  ELECTRICAL CHARACTERISTICS PNP 5401 (Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA hFE1 VCE=-5V,IC=-1mA 50 hFE2 VCE=-5V,IC=-10mA 100 hFE3 VCE=-5V,IC=-50mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure VCE(sat) VBE(sat) Cobo fT NF 300 IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -0.5 V IC=-10mA, IB=-1mA -1 V IC=-50mA, IB=-5mA -1 V VCB =-10V, f = 1.0MHz, IE = 0 6.0 pF 300 MHz 8.0 dB VCE =-10V, IC =-10mA, f = 100MHz 100 VCE=-5.0V, IC =-200μA, RS = 10¡f = 1.0kHz 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.