MMDT9014DW

Plastic-Encapsulate Transistors  DUAL TRANSISTOR (NPN+NPN) FEATURES 6  z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT9015 DW) z Ideal for Medium Power Amplification and Switching 5 4 1 2 3 MARKING:TGL6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Parameter Symbol Symbol Test conditions Test conditions Min Min Typ Typ Max Max Unit Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=100μA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Collector cut-off current ICEO VCE=35V, IB=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 μA DC current gain hFE VCE=5V, IC=1mA 300 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=5mA 1 V 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob Noise Figure NF VCE=5V,IC=2mA 0.58 VCE=5V,IC=10mA, f=30MHz 150 VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, Rg=2kΩ,f=1kHz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MHz 3.5 pF 10 dB hFE Static Characteristic 8 1000 6 Ta=100℃ 18uA Ta=25℃ hFE 16uA DC CURRENT GAIN (mA) 20uA IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 14uA 4 12uA 10uA 8uA 2 —— IC 6uA 100 4uA COMMON EMITTER VCE= 5V IB=2uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 0.1 8 1 (V) 10 COLLECTOR CURRENT VBEsat IC —— IC 100 (mA) IC 2 1 0.1 Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 0.01 0.1 1 10 COLLECTOR CURRENT IC 10 COLLECTOR CURRENT (mA) —— VBE fT 1000 Ta=25℃ 1 COMMON EMITTER VCE= 5V 0.1 0.0 0.3 0.6 0.9 fT Ta=100℃ 10 100 TRANSITION FREQUENCY (mA) IC COLLECTOR CURRENT 1 IC 100 (mA) —— IC (MHz) 100 IC 0.1 0.1 100 10 COMMON EMITTER VCE=5V Ta=25℃ 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/ Cib —— 10 COLLECTOR CURRENT VCB/ VEB PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 CAPACITANCE C (pF) Ta=25 ℃ Cib Cob 1 0.1 0.1 1 10 20 200 150 100 50 0 0 25 50 75 100 125 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 150 SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.