MMDT3052DW

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features • Each transistor elements are independent Applications • For low frequency amplify application MARKING: 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Tj 125 ℃ Tstg - 55 to + 125 ℃ Junction Temperature Storage Temperature Range Absolute Maximum Ratings (Ta = 25℃) Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 90 120 200 350 - 240 400 700 - Collector Base Cutoff Current at VCB = 50 V ICBO - - 100 nA Emitter Base Cutoff Current at VEB = 6 V IEBO - - 100 nA V(BR)CEO 50 - - V VCE(sat) - - 0.3 V fT - 200 - MHz Cob - 2.5 - pF DC Current Gain at VCE = 6 V, IC = 0.1 mA at VCE = 6 V, IC = 1 mA E F G Collector Emitter Breakdown Voltage at IC = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Transition Frequency at VCE = 6 V, -IE = 10 mA Collector Output Capacitance at VCB = 6 V, f = 1 MHz 1 Electrical Characteristics Curves 2 3