MMDT5401DW

Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES  Complementary to MMDT5551DW  Small Surface Mount Package  Ideal for Medium Power Amplificationand Switching MARKING:2L MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V, IC=0 -50 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=-5V, IC=-1mA 50 VCE=-5V, IC=-10mA 60 VCE=-5V, IC=-50mA 50 300 IC=-50mA, IB=-5mA -0.5 V IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -1 V IC=-10mA, IB=-1mA -1 V VCE=-10V,IC=-10mA , f=100MHz 100 VCB=-10V, IE=0, f=1MHz 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MHz 6 pF Typical Characteristics hFE —— Static Characteristic COMMON EMITTER Ta=25℃ (mA) -16 IC -14 -0.08mA -12 -0.07mA -10 -0.06mA -8 -0.05mA DC CURRENT GAIN hFE -0.09mA -0.04mA -6 -0.02mA -2 300 250 Ta=100℃ 200 150 Ta=25℃ 100 -0.03mA -4 COMMON EMITTER VCE=-5V 350 -0.1mA COLLECTOR CURRENT -18 50 IB=-0.01mA 0 -0 -0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VBEsat -1000 —— VCE -7 -1 -8 COLLECTOR CURRENT VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ -400 -200 -1 -10 -100 COLLECTOR CURRENT IC -200 —— IC (mA) IC (mA) -200 -100 -200 Ta=100℃ -0.1 Ta=25℃ -0.01 -200 -1 VBE fT 1000 COMMON EMITTER VCE=-5V TRANSITION FREQUENCY Ta=25℃ -1 -400 -600 -800 -1000 100 10 1 -1 -1200 VCB/ VEB PC —— Ta 300 COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 Ta=25℃ C (pF) Cib 10 Cob REVERSE VOLTAGE -10 V (V) -35 2 of 3 -70 -10 COLLECTOR CURRENT 100 -1 IC Ta=25℃ BASE-EMMITER VOLTAGE VBE (mV) Cob/ Cib —— —— COMMON EMITTER VCE= -10V (MHz) fT (mA) Ta=100℃ -10 COLLECTOR CURRENT IC COLLECTOR CURRENT IC -100 -1 (mA) -10 1 -0.1 (mA) β=10 -600 -0.1 -200 IC IC -10 -800 -100 -10 (V) β=10 CAPACITANCE IC 400 -20 250 200 150 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 ( ℃) a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 150 SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.