MMDT4403DW

Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES z Epitaxial Planar Die Construction z Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25℃ unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.2 W RθJA Thermal Resistance from Junction to Ambient 625 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA , Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IE=0 Min Typ Max Unit -40 V IB=0 -40 V IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35V, IB=0 -0.5 μA Emitter cut-off current IEBO VEB=-5V, -0.1 μA hFE(1) VCE=-1V, IC= -0.1mA 30 hFE(2) VCE=-1V, IC= -1mA 60 hFE(3) VCE=-1 V, IC= -10mA 100 hFE(4) VCE=-2 V, IC= -150mA 100 hFE(5) VCE=-2 V, IC= -500mA 20 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=0 300 VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V VBE(sat)1 IC= -150 mA, IB=-15mA -0.95 V VBE(sat)2 IC= -500 mA, IB=-50mA -1.3 V -0.75 Transition frequency fT VCE= -10V, IC=-20mA,f = 100MHz Output capacitance Cob VCB=-10V, IE=0,f=1MHz 8.5 pF VCC=-30V, VBE=-2V,IC=-150mA , IB1=-15mA 15 nS Delay time td Rise time tr Storage time tS Fall time tf 200 VCC=-30V, IC=-150mA B1=- IB2= -15mA 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. MHz 20 nS 225 nS 30 nS Typical Characteristics 1000 -1mA COMMON EMITTER Ta=25℃ -150 -900uA Ta=100℃ -800uA (mA) -120 -600uA -90 -500uA hFE -700uA -400uA -60 -300uA -30 100 DC CURRENT GAIN IC COLLECTOR CURRENT —— IC hFE Static Characteristic -180 Ta=25℃ 10 -200uA COMMON EMITTER VCE=-2V IB=-100uA -0 -0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE -1 (V) -10 -100 COLLECTOR CURRENT VBEsat IC IC —— -100 Ta=100℃ Ta=25℃ -10 IC -1 -10 -100 COLLECTOR CURRENT IC IC Ta=25℃ -1000 β=10 -1 -0.1 Ta=100℃ β=10 -100 -0.1 -600 -1 -10 -100 COLLECTOR CURRENT (mA) —— VBE Cob/ Cib 100 -600 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) (mA) CAPACITANCE Ta=100℃ Ta=25℃ -1 -0.1 -0.0 -0.2 Cob C IC COLLECTOR CURRENT Ta=25℃ Cib -100 -10 -0.4 -0.6 -0.8 -1.0 10 1 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) fT —— -10 REVERSE VOLTAGE IC Pc 250 fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) 1000 -600 (mA) COMMON EMITTER VCE=-2V TRANSITION FREQUENCY -600 (mA) -5000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 1 -0.1 100 COMMON EMITTER VCE=-10V —— V -20 (V) Ta 200 150 100 50 Ta=25℃ 0 10 -1 -10 COLLECTOR CURRENT j-elec.com www.c -100 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.  SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.