SILICON PLANAR ZENER DIODES
PINNING
Features
• Ideally suited for automated assembly processes
• Total power dissipation: max. 500 mW
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter
Symbol
Value
Unit
Power Dissipation
Ptot
500
mW
Junction Temperature
TJ
150
O
TStg
- 65 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
Storage Temperature Range
C
C
Characteristics at Ta = 25 C
O
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
1 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
Unit
C/W
O
V
Characteristics at Ta = 25 C
O
Zener Voltage Range 1)
Marking
Code
Type
lZT
for
Dynamic Impedance
VZT
ZZT
Vznom
V
mA
V
Ω (Max.)
ZZK
Reverse Leakage Current
at IZK
IR
at VR
Ω (Max.)
mA
μA (Max.)
V
BZT52C2V4W
MH
2.4
5
2.2...2.6
100
600
1
50
1
BZT52C2V7W
MJ
2.7
5
2.5...2.9
100
600
1
20
1
BZT52C3V0W
MK
3.0
5
2.8...3.2
95
600
1
10
1
BZT52C3V3W
MM
3.3
5
3.1...3.5
95
600
1
5
1
BZT52C3V6W
MN
3.6
5
3.4...3.8
90
600
1
5
1
BZT52C3V9W
MP
3.9
5
3.7...4.1
90
600
1
3
1
BZT52C4V3W
MR
4.3
5
4...4.6
90
600
1
3
1
BZT52C4V7W
MX
4.7
5
4.4...5
80
500
1
3
2
BZT52C5V1W
MY
5.1
5
4.8...5.4
60
480
1
2
2
BZT52C5V6W
MZ
5.6
5
5.2...6
40
400
1
1
2
BZT52C6V2W
NA
6.2
5
5.8...6.6
10
150
1
3
4
BZT52C6V8W
NB
6.8
5
6.4...7.2
15
80
1
2
4
BZT52C7V5W
NC
7.5
5
7...7.9
15
80
1
1
5
BZT52C8V2W
ND
8.2
5
7.7...8.7
15
80
1
0.7
5
BZT52C9V1W
NE
9.1
5
8.5...9.6
15
100
1
0.5
6
BZT52C10W
NF
10
5
9.4...10.6
20
150
1
0.2
7
BZT52C11W
NH
11
5
10.4...11.6
20
150
1
0.1
8
BZT52C12W
NJ
12
5
11.4...12.7
25
150
1
0.1
8
BZT52C13W
NK
13
5
12.4...14.1
30
170
1
0.1
8
BZT52C15W
NM
15
5
13.8...15.6
30
200
1
0.1
10.5
BZT52C16W
NN
16
5
15.3...17.1
40
200
1
0.1
11.2
BZT52C18W
NP
18
5
16.8...19.1
45
225
1
0.1
12.6
BZT52C20W
NR
20
5
18.8...21.2
55
225
1
0.1
14
BZT52C22W
NX
22
5
20.8...23.3
55
250
1
0.1
15.4
BZT52C24W
NY
24
5
22.8...25.6
70
250
1
0.1
16.8
BZT52C27W
NZ
27
2
25.1...28.9
80
300
0.5
0.1
18.9
BZT52C30W
PA
30
2
28...32
80
300
0.5
0.1
21
BZT52C33W
PB
33
2
31...35
80
325
0.5
0.1
23.1
BZT52C36W
PC
36
2
34...38
90
350
0.5
0.1
25.2
BZT52C39W
PD
39
2
37...41
130
350
0.5
0.1
27.3
1)
VZ is tested with pulses (20 ms).
2 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
3 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
SOD-123
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