PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
40
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
200
mA
Total Power Dissipation
Ptot
200
mW
Tj
150
O
Tstg
- 55 to +150
O
Junction Temperature
Storage Temperature Range
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C
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
60
80
100
60
30
300
-
-
Collector Emitter Cutoff Current
at -VCE = 30 V
-ICES
-
50
nA
Emitter Base Cutoff Current
at -VEB = 3 V
-IEBO
-
50
nA
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
40
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
40
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
-VCE(sat)
-
0.25
0.4
V
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
-VBE(sat)
0.65
-
0.85
0.95
V
fT
250
-
MHz
Cob
-
4.5
pF
Delay Time
at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
td
-
35
ns
Rise Time
at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA
tr
-
35
ns
Storage Time
at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA
tstg
-
225
ns
Fall Time
at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA
tf
-
75
ns
DC Current Gain
at -VCE = 1 V, -IC = 0.1 mA
at -VCE = 1 V, -IC = 1 mA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 1 V, -IC = 100 mA
Transition Frequency
at -VCE = 20 V, IE = 10 mA, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 100 KHz
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3 of 5
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
Power Dissipation: Ptot (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Ambient Temperature: Ta ( C)
O
Fig.10 Power Dissipation vs Ambient Temperature
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SOT-323 Package Outline Dimensions
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