MMBTSC2412

TRANSISTOR (NPN) FEATURES · Low Cob ,Cob = 2.0 pF (Typ). SOT-23 MARKING : BR 1．BASE 2．EMITTER 3．COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 µA DC current gain hFE VCE=6V, IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 180 390 IC=50mA, IB=5mA 0.4 VCE=12V, IC=-2mA, f=100MHz 160 VCB=12V, IE=0, f=1MHz 2.0 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V MHz 3.5 pF Typical Characteristics MMBTSC2412 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.