PTUC05D5B – ESD Protection Diode
Feature
100 Watts peak pulse power (8/20s)
SOD523 package
Bidirectional configurations
Solid state silicon-avalanche technology
Low clamping voltage
Low leakage current
Low capacitance (Cj=0.2pF typ.)
Protection one data/power line
IEC61000-4-2 (ESD) ±20kV (Air), ±15kV (Contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Lightning): 5A (8/20s)
Applications
Mechanical Data
Microprocessor based equipment
SOD523 package
Notebooks, Desktops, and Servers
Molding compound flammability rating: UL94 V-0
Portable Instrumentation
Tape and Reel Packaging
Personal Digital Assistant (PDA)
RoHS/WEEE Compliant
Cell Phone Handsets and Accessories
Schematic and PIN Configuration
Maximum Rating
Parameter
Symbol
IEC61000-4-2 ESD Voltage – Air Mode
VESD(1)
IEC61000-4-2 ESD Voltage – Contact Mode
Limit
±20
±15
Unit
kV
Peak Pulse Power
PPP(2)
100
Peak Pulse Current
IPP(2)
5.0
A
TL
260
°C
Junction Temperature
TJ
-55~125
°C
Storage Temperature Range
Tstg
-55~125
°C
Maximum Lead Solder Temperature (10 seconds duration)
W
Note:
1.
2.
3.
Device stressed with ten non-repetitive ESD pulses.
Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5.
All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted.
新竹市科學工業園區工業東四路 24-1 號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 1 of 4
2017/11/28 Rev: A
PTUC05D5B – ESD Protection Diode
Electrical Characteristics
Parameter
Reverse Stand-off Voltage
Symbol
Test Conditions
Reverse Leakage Current
IR
VRWM = 5V
Peak Pulse Current
IPP
Junction Capacitance
6.0
8.5
VC(2)
CJ
Max
5.0
IT = 1mA
Clamping Voltage
Typ
V
VBR
Reverse Breakdown Voltage
Min
RWM(1)
0.1
IPP = 5A
VR = 0V, f = 1MHz
0.2
Unit
V
V
0.5
A
5.0
A
20.5
V
0.3
pF
Note:
1.
2.
3.
Other voltages available upon request.
Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5.
All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted.
Electrical Parameters
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Reverse Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Working Peak Reverse Voltage
新竹市科學工業園區工業東四路 24-1 號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 2 of 4
2017/11/28 Rev: A
PTUC05D5B – ESD Protection Diode
Typical Characteristics
新竹市科學工業園區工業東四路 24-1 號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 3 of 4
2017/11/28 Rev: A
PTUC05D5B – ESD Protection Diode
SOD523 Package Outline Dimensions
Symbol
Dimensions (mm)
Dimensions (inch)
Min
Max
Min
Max
A
0.500
0.700
0.020
0.028
b
0.250
0.350
0.010
0.014
C
0.070
0.200
0.0028
0.0079
D
1.100
1.300
0.043
0.051
E
0.700
0.900
0.028
0.035
HE
1.500
1.700
0.059
0.067
L
0.150
0.250
0.006
0.010
Marking
Packaging Information
Order Code
Packaging
Reel Size
PCS/Reel
PTUC05D5B
SOD523
7 inch
5,000
新竹市科學工業園區工業東四路 24-1 號
No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.
TEL: +886-3-5643931 FAX: +886-3-5644624
http://www.pttc.com.tw
Page: 4 of 4
2017/11/28 Rev: A
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