BZT52C7V5W

SILICON PLANAR ZENER DIODES PINNING Features • Ideally suited for automated assembly processes • Total power dissipation: max. 500 mW PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Power Dissipation Ptot 500 mW Junction Temperature TJ 150 O TStg - 65 to + 150 O Symbol Max. RthA 340 VF 0.9 Storage Temperature Range C C Characteristics at Ta = 25 C O Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Unit C/W O V Characteristics at Ta = 25 C O Zener Voltage Range 1) Marking Code Type lZT for Dynamic Impedance VZT ZZT Vznom V mA V Ω (Max.) ZZK Reverse Leakage Current at IZK IR at VR Ω (Max.) mA μA (Max.) V BZT52C2V4W MH 2.4 5 2.2...2.6 100 600 1 50 1 BZT52C2V7W MJ 2.7 5 2.5...2.9 100 600 1 20 1 BZT52C3V0W MK 3.0 5 2.8...3.2 95 600 1 10 1 BZT52C3V3W MM 3.3 5 3.1...3.5 95 600 1 5 1 BZT52C3V6W MN 3.6 5 3.4...3.8 90 600 1 5 1 BZT52C3V9W MP 3.9 5 3.7...4.1 90 600 1 3 1 BZT52C4V3W MR 4.3 5 4...4.6 90 600 1 3 1 BZT52C4V7W MX 4.7 5 4.4...5 80 500 1 3 2 BZT52C5V1W MY 5.1 5 4.8...5.4 60 480 1 2 2 BZT52C5V6W MZ 5.6 5 5.2...6 40 400 1 1 2 BZT52C6V2W NA 6.2 5 5.8...6.6 10 150 1 3 4 BZT52C6V8W NB 6.8 5 6.4...7.2 15 80 1 2 4 BZT52C7V5W NC 7.5 5 7...7.9 15 80 1 1 5 BZT52C8V2W ND 8.2 5 7.7...8.7 15 80 1 0.7 5 BZT52C9V1W NE 9.1 5 8.5...9.6 15 100 1 0.5 6 BZT52C10W NF 10 5 9.4...10.6 20 150 1 0.2 7 BZT52C11W NH 11 5 10.4...11.6 20 150 1 0.1 8 BZT52C12W NJ 12 5 11.4...12.7 25 150 1 0.1 8 BZT52C13W NK 13 5 12.4...14.1 30 170 1 0.1 8 BZT52C15W NM 15 5 13.8...15.6 30 200 1 0.1 10.5 BZT52C16W NN 16 5 15.3...17.1 40 200 1 0.1 11.2 BZT52C18W NP 18 5 16.8...19.1 45 225 1 0.1 12.6 BZT52C20W NR 20 5 18.8...21.2 55 225 1 0.1 14 BZT52C22W NX 22 5 20.8...23.3 55 250 1 0.1 15.4 BZT52C24W NY 24 5 22.8...25.6 70 250 1 0.1 16.8 BZT52C27W NZ 27 2 25.1...28.9 80 300 0.5 0.1 18.9 BZT52C30W PA 30 2 28...32 80 300 0.5 0.1 21 BZT52C33W PB 33 2 31...35 80 325 0.5 0.1 23.1 BZT52C36W PC 36 2 34...38 90 350 0.5 0.1 25.2 BZT52C39W PD 39 2 37...41 130 350 0.5 0.1 27.3 1) VZ is tested with pulses (20 ms). 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. SOD-123