2N7002KT

2N7002KT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 100mA ● RDS(ON)( at VGS=10V) ＜8.0 Ω ● RDS(ON)( at VGS=4.5V) ＜13.0 Ω ● ESD Protected Up to 2.0KV (HBM) General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications SOT-523 ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current ID 100 mA Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25℃ PD 0.15 W RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State Junction and Storage Temperature Range www.slkormicro.com 1 Unit 2N7002KT ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.2 V VGS= 10V, ID=100mA 2.5 8.0 Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=10mA 3.0 13.0 Static Parameter Gate-Body Leakage Current Diode Forward Voltage C 0.8 V Ω 1.2 V IS 100 mA Input Capacitance Ciss 18 Output Capacitance Coss Reverse Transfer Capacitance Crss Maximum Body-Diode Continuous Current VSD IS=100mA,VGS=0V Dynamic Parameters B VDS=30V,VGS=0V,f=1MHZ 12 pF 7 Switching Parameters B Total Gate Charge Qg 1.7 Gate Source Charge Qgs Gate Drain Charge Qgd 0.27 Turn-on Delay Time tD(on) 5 VGS=10V,VDS=30V,ID=0.1A 0.19 VGS=10V,VDD=30V,RG=6Ω,ID=0.1A Turn-off Delay Time A. Repetitive Rating: Pulse width limited by maximum junction temperature. B. These parameters have no way to verify. C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%. www.slkormicro.com ns 17 tD(off) 2 nC 2N7002KT ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance www.slkormicro.com Figure6. Drain-Source on Resistance 3 2N7002KT Figure7. Safe Operation Area Figure8. Switching wave ■SOT-523 Package Outline Dimensions www.slkormicro.com 4