FMMT458

FMMT458 SMD Type Transistor High Voltage Transistors SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 400 Volt VCEO 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 5 V Peak collector current ICM 1 A Collector current IC 225 mA Base current IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.slkormicro.com 1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector FMMT458 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 400 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA 400 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector cutoff current ICBO VCB=320V 100 nA Collector Cut-Off Current ICES VCE=320V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA IC=20mA,IB=2mA 0.2 V IC=50mA,IB=6mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 0.9 V Base-emitter turn on voltage VBE(on) IC=50mA,VCE=10V 0.9 V Collector-emitter saturation voltage Static Forward Current Transfer Ratio VCE(sat) hFE IC=1mA, VCE=10V 100 IC=50mA, VCE=10V* 100 IC=100mA, VCE=10V* 15 IC=10mA,VCE=20V,f=20MHz 50 300 MHz Transition frequency fT Output capacitance Cobo VCB=20V, f=1MHz ton IC=50mA, VCC=100V 135 ns toff IB1=5mA, IB2=-10mA 2260 ns Switching times www.slkormicro.com 2 5 pF