2SC2712-Y

2SC2712 NPN Transistors 3 2 Features 1 1.Base 2.Emitter 3.Collector ■ Simplified outline(SOT-23) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) High hFE: hFE = 70 700 Low noise: NF = 1dB (typ.), 10dB (max) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base v oltage Parameter VCBO 60 V Collector-emitter v oltage VCEO 50 V Emitter-base v oltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 5 Typ Max V Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 DC current gain hFE VCE= 6V, IC= 2mA Noise figure NF VCE = 6 V, IC = 0.1 mA , f = 1KHz,RG=10KΩ Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz Transition frequency fT VCE= 10V, IC= 1mA hFE Classification Type 2SC2712-O 2SC2712-Y 2SC2712-G 2SC2712-L Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL www.slkormicro.com 1 70 80 Unit nA V 700 1 10 2 3.5 dB pF MHz 2SC2712 Typlcal Characteristics Static Characteristic 10 —— IC hFE 400 COMMON EMITTER VCE=6V 8 50uA 6 Ta=100℃ hFE 40uA DC CURRENT GAIN COLLECTOR CURRENT 300 45uA IC (mA) COMMON EMITTER Ta=25℃ 35uA 30uA 4 25uA 20uA 15uA 2 Ta=25℃ 200 100 10uA 0 IB=5uA 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.3 VCE 0 0.5 10 1 10 (V) 100 COLLECTOR CURRENT —— IC 150 (mA) —— IC VBEsat 1.2 IC Ta=100℃ 0.1 Ta=25℃ 0.0 1 10 100 COLLECTOR CURRENT IC 150 Ta=100℃ 0.4 0.0 150 β=10 1 10 (mA) 100 COLLECTOR CURRENT —— VBE fT 1000 —— IC 150 (mA) IC (MHz) Ta=100℃ fT IC IC Ta=25℃ 0.8 COMMON EMITTER VCE=6V (mA) 100 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.2 10 TRANSITION FREQUENCY COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=25℃ 1 100 COMMON EMITTER VCE=10V o Ta=25 C 0.1 0.2 0.4 0.6 0.8 10 1.0 1 100 Cob/ Cib 10 3 30 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— VCB/ VEB Pc 200 —— IC 70 (mA) Ta f=1MHz IE=0/ IC=0 Ta=25℃ COLLECTOR POWER DISSIPATION Pc (mW) 10 CAPACITANCE C (pF) Cib Cob 1 0.1 0.2 1 REVERSE VOLTAGE www.slkormicro.com 10 VR 150 100 50 0 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 125 100 Ta (℃ ) 150 2SC2712 ■ SOT-23 D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 www.slkormicro.com 3