2SK3018W
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
● ID
300mA
● RDS(ON)( at VGS=10V)
<8.0ohm
● RDS(ON)( at VGS=4.5V)
<13.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
30
V
Gate-source Voltage
VGS
±20
V
Drain Current
ID
300
mA
Pulsed Drain Current A
IDM
1.5
A
Total Power Dissipation @ TA=25℃
PD
350
mW
RθJA
357
℃/ W
TJ ,TSTG
-55~+150
℃
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
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1
Unit
2SK3018W
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS1
VGS= ±20V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
Static Drain-Source On-Resistance
RDS(ON)
Typ
Max
Units
Static Parameter
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
1
0.65
μA
±10
μA
1.5
V
VGS= 10V, ID=300mA
2.5
8.0
VGS= 4.5V, ID=200mA
3.0
13.0
Ω
VSD
IS=300mA,VGS=0V
IS
1.2
V
340
mA
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
18
VDS=30V,VGS=0V,f=1MHZ
12
pF
7
Switching Parameters
Total Gate Charge
Turn-on Delay Time
Qg
VGS=10V,VDS=30V,ID=0.3A
tD(on)
1.7
Reverse recovery Time
tD(off)
trr
ns
17
VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
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nC
5
VGS=10V,VDD=30V, ID=300mA,
RGEN=6Ω
Turn-off Delay Time
2.4
2
30
ns
2SK3018W
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
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Figure6. Drain-Source on Resistance
3
2SK3018W
Figure7. Safe Operation Area
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Figure8. Switching wave
4
2SK3018W
■ SOT-323 Package information
■SOT-323 Suggested Pad Layout
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5
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