BAP50-03

BAP50-03 General Purpose Pin Diode 2 ■ Features ● • Low diode capacitance ● • Low diode forward resistance 1.Cathode 2.Anode 1 ■ Simplified outline(SOD-323) ■ Marking Type number Marking code BAP50-03 A81 ■ Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Symbols BAP50-03 Units VR 50 V Continuous Forward Current IF 50 mA Power dissipation PD 200 mW Parameter Continuous Reverse Voltage I R = 10μA Forward Voltage I F =50 mA VF 1.1 V Reverse current V R =50V,Tj=25℃ IR 100 nA Diode capacitance V R =0V,f=1MHz V R =1V,f=1MHz V R =5V,f=1MHz CT 0.91 0.55 0.35 pF Diode forward resistance IF=0.5mA , f=100MHz IF=1.0mA , f=100MHz IF=10 mA , f=100MHz rD 40 25 5 Ω Junction Temperature Tj 150 °C Storage Temperature T stg -55 ~ +150 °C www.slkormicro.com 1 BAP50-03 Fig.2 Typical Instaneous Reverse Characteristics 240 Instaneous Reverse Current ( u A) POWER DISSIPATION (mW) Fig.1 Power Derating Curve 200 160 120 80 40 0 25 50 75 100 125 150 175 100 T a=100°C 10 1 0.1 T a =25°C 0.01 0 Junction Capacitance C T ( pF) Forward Current I F (mA) 200 100 10 C 5° 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 25 30 35 40 45 T J=25°C f=1MHz 0.1 1.0 10 Reverse Voltage V R (V) Forward Voltage V F (V) www.slkormicro.com 15 1.0 0.01 0.1 1 0 10 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic =2 Ta 5 Instaneous Reverse Voltage (V) AMBIENT TEMPERATURE T a (°C) 2 100 BAP50-03 ■ SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° mil ■ The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) www.slkormicro.com 3 8