MMBTA44

MMBTA44 General Purpose Transistors NPN Silicon Product Summary ● VCEO ● Ic ● PC 400V 200mA 350mW FEATURE ● High Collector-Emitter Voltage ● Complement to MMBTA94 SOT-23 ■ MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 0.2 A Power Dissipation PC 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55～+150 ℃ Thermal Resistance from Junction to Ambient www.slkormicro.com 1 MMBTA44 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=10V, IC=1mA 40 hFE(2) * VCE=10V, IC=10mA 50 hFE(3) * VCE=10V, IC=50mA 45 hFE(4) * VCE=10V, IC=100mA 40 200 VCE(sat)1* IC=1mA, IB=0.1mA 0.4 V VCE(sat)2* IC=10mA, IB=1mA 0.5 V VCE(sat)3* IC=50mA, IB=5mA 0.75 V VBE(sat)* IC=10mA, IB=1mA 0.75 V Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 pF Transition frequency fT VCE=20V, = IC 10mA,f = 30MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.slkormicro.com 2 50 MHz MMBTA44 ■ Typical Performance Characteristics Static Characteristic 16 56uA 48uA COLLECTOR CURRENT Ta=100℃ hFE IC 10 64uA DC CURRENT GAIN (mA) 12 72uA 8 40uA 6 IC VCE= 10V COMMON EMITTER Ta=25℃ 80uA 14 hFE —— 1000 32uA Ta=25℃ 100 24uA 4 16uA 2 IB=8uA 0 0 5 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 10 0.1 20 15 VCEsat —— IC IC 10 100 (mA) IC 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1 COLLECTOR CURRENT (V) 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 β=10 100 Ta=100℃ Ta=25℃ 30 0.2 0.0 0.1 1 10 COLLECTOR CURRENT Cob / Cib —— IC VCB / VEB COLLECTOR POWER DISSIPATION Pc (mW) C CAPACITANCE Pc 400 Ta=25℃ Cib Cob 10 10 100 COLLECTOR CURRENT f=1MHz IE=0 / IC=0 100 1 (mA) 500 (pF) 10 100 —— IC (mA) Ta 350 300 250 200 150 100 50 1 0.1 1 REVERSE VOLTAGE www.slkormicro.com V (V) 10 0 20 3 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125 150 MMBTA44 ■ SOT-23 Package information ■ SOT-23 Suggested Pad Layout www.slkormicro.com 4