2N3904

2N3904 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 用途 / Applications 低电流，低电压。用于一般放大。 Low current, Low voltage. General purpose amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 PIN1：Collector 23 PIN 2：Base PIN 3：Emitter 放大及印章代码 / hFE Classifications & Marking *HFE(1)分档及打印 分 档 1 HFE(1) 100~300 印记见下 具体内容以打印为准 打印（简例） 其 它 说 2N 3 904 H 331 封装外形：TO-92 管脚排列： E、B、C 明 & Marking 1/31 www.slkormicro.com 1 2N3904 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 符号 Symbol 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit VCBO IC=10μA IE=0 60 V VCEO IC=1.0mA IB=0 40 V Emitter to Base Breakdown Voltage VEBO IE=10μA IC=0 6.0 V Collector Cut-Off Current ICBO VCB=50V IE=0 0.05 μA Emitter Cut-Off Current IEBO VEB=5.0V IC=0 0.05 μA hFE(1) VCE=1.0V IC=10mA 100 30 DC Current Gain 300 Collector to Emitter Saturation Voltage hFE(2) VCE=1.0V IC=100mA VCE(sat) IC=50mA IB=5.0mA 0.3 V Base to Emitter Saturation Voltage VBE(sat) IC=50mA V f=100MHz IB=5.0mA VCE=20V 0.95 fT IC=10mA VCB=5.0V IE=0 VCC=3.0V VBE=0.5V Current Gain Bandwidth Product Output Capacitance Cob Turn On Time Ton Turn Off Time Toff f=1.0MHz IC=10mA VCC=3.0V IC=10mA IB1=-IB2=1.0mA & Marking 1/31 www.slkormicro.com IB1=1.0mA 2 300 MHz 4.0 pF 0.07 μs 0.25 μs 2N3904 电参数曲线图 / Electrical Characteristic Curve & Marking 1/31 www.slkormicro.com 3