13001

13001 General Purpose Transistors NPN Silicon Product Summary ● VCEO ● Ic ● PC 400V 0.2A 750mW SOT-23 ■ MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 0.2 A Power Dissipation PC 0.75 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55～+150 ℃ www.slkormicro.com 1 13001 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Testconditons Min Collecto- base breakdown voltage VCBO Ic=0.1mA， IE=0 600 Collector- emitter breakdown voltage VCEO Ic=1mA， IB=0 400 Emitter - base breakdown voltage VEBO IE=0.1mA， IC=0 Typ Max V 7 Base-emitter voltage VBE IE=100mA 1.1 Collector cut-off current ICBO VCB=600V , IE=0 100 Collector cut-off current ICEO VCE=400V , IB=0 100 Emitter cut-off current IEBO VEB=7V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=20mA 0.5 Base - emitter saturation voltage VBE(sat) IC=100mA, IB=20mA 1.2 hFE(1) VCE=20V, IC=20mA hFE(2) VCE=10V, IC=0.25mA DC current gain Storage time ts Fall time tf Transition frequency fT www.slkormicro.com 10 2 μA V 70 5 1.5 IC=50mA, IB1=-IB2=5mA, VCC=45V VCE= 20V, IC=20mA,f=1MHz Unit 0.3 8 μs MHz www.slkormicro.com Capacitance,COB (pF) Saturation Voltage,VBE(SAT),VCE(SAT) DC Current Gain,hFE Collecter Current,IC (mA) 13001 ■ Typical Performance Characteristics 3 13001 ■ SOT-23 Package information ■ SOT-23 Suggested Pad Layout www.slkormicro.com 4