BAS40-04

BAS40-04 ■ Schottky Diodes 3 ■ Features ● Low Forward Voltage ● Fast Switching 2 1 ■ Simplified outline(SOT-23) BAS40 BAS40-06 BAS40-04 BAS40-05 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Rating Unit 40 V DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Power Dissipation Pd 200 mW RθJA 500 ℃/W TJ 125 Tstg -55 to 150 Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage Test Conditions Min Typ Max Unit 0.38 V VR IR= 100 uA VF1 IF= 1mA VF2 IF= 40 mA 1 Reverse voltage leakage current IR1 VR= 30 V 200 nA Junction capacitance Cj VR= 0 V, f= 1 MHz 5 pF Reverse recovery time trr IF=IR=10mA,Irr=1mA, RL=100Ω 5 ns Forward voltage 40 ■ Marking NO BAS40 BAS40-06 BAS40-05 BAS40-04 Marking 43 46 45 44 www.slkormicro.com 1 BAS40-04 ■ Typical Characterisitics Forward Characteristics Reverse 100 Characteristics 100 Ta=100℃ (uA) Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT IF (mA) 10 10 Ta=25℃ 1 1 0.1 Ta=25℃ 0.01 0.1 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 1E-3 1.0 10 20 30 REVERSE VOLTAGE Capacitance Characteristics 4.0 0 VF (V) VR 40 (V) Power Derating Curve 0.25 3.5 (W) 0.20 PD 3.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 2.5 2.0 1.5 1.0 0 5 10 15 REVERSE VOLTAGE www.slkormicro.com 20 VR 25 0.15 0.10 0.05 0.00 30 (V) 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta (℃) 125 BAS40-04 ■ SOT-23 D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 1 0 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 www.slkormicro.com 3