MMDT3946
Small Surface Mount Transistor
FEATURES
z
Complementary pair.
z
One 3904-Type NPN.
One 3906-Type PNP.
z
Ideal for low power amplification and switching.
z
Ultra-Small surface mount package.
z
Expitaxial planar die construction.
SOT-363
APPLICATIONS
z
General switching and amplification.
MAXIMUM RATIPN Section
@ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
collector-base voltage
60
V
VCEO
collector-emitter voltage
40
V
VEBO
emitter-base voltage
6
V
IC
collector current -continuous
0.2
A
PD
Power dissipation
0.2
W
RθJA
Thermal Resistance, Junction to Ambient
625
℃/W
MAXIMUM RATING
PNP 3946 Section @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
collector-base voltage
-40
V
VCEO
collector-emitter voltage
-40
V
VEBO
emitter-base voltage
-5.0
V
IC
collector current -continuous
-0.2
A
PD
Power dissipation
0.2
W
RθJA
Thermal Resistance, Junction to Ambient
625
℃/W
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1
MMDT3946
ELECTRICAL CHARACTERISTICS NPN 3946 Section @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
Collector-base breakdown voltage
IC=10μA,IE=0
60
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA,IB=0
40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA,IC=0
5
V
ICEX
collector cut-off current
VCE= 30V VEB(OFF)= 3.0V
-
50
nA
IBL
Base cut-off current
VCE= 30V VEB(OFF)= 3.0V
-
50
nA
DC current gain
VCE=1V,IC= 0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
MAX.
UNIT
300
-
IC=10mA,IB =1.0mA
-
200
mV
IC=50mA,IB =5mA
-
300
mV
IC=10mA,IB =1mA
650
850
mV
IC=50mA, IB =5mA
-
950
mV
collector-emitter saturation voltage
base-emitter saturation voltage
Cobo
Output capacitance
IE =0, VCB =5V; f =1MHz
-
4
pF
Cobi
Input capacitance
IC=0, VEB =0.5V; f =1MHz
-
8
pF
fT
transition frequency
IC=20mA,VCE=20V,f=100MHz
300
-
MHz
NF
noise figure
IC=0.1mA,VCE =5V,RS=1kΩ,
f = 1kHz
-
5
dB
td
delay time
-
35
ns
tr
rise time
-
35
ns
ts
storage time
-
200
ns
tf
fall time
-
50
ns
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VCC=3V,VBE(off)=-0.5V
IC=10mA,IB1=IB2=1mA
VCC=3V,IC=10mA
IB1=IB2=1mA
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MMDT3946
ELECTRICAL CHARACTERISTICS PNP 3946 Section @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA,IE=0
-40
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA,IB=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA,IC=0
-5
V
ICEX
collector cut-off current
VCE=-30V,VEB(OFF)=-3.0V
-
-0.05
μA
IBL
Base cut-off current
VCE=-30V,VEB(OFF)=-3.0V
-
-0.05
μA
DC current gain
VCE =-1V,IC= -0.1mA
VCE =-1V,IC =-1mA
VCE =-1V,IC =-10mA
VCE =-1V,IC =-50mA
VCE =-1V,IC =-100mA
hFE
VCE(sat)
MAX.
UNIT
60
80
100
60
30
300
-
IC =-10mA,IB =-1mA
-
-250
mV
IC =-50mA,IB =-5mA
-
-400
mV
IC =-10mA,IB =-1mA
-650
-850
mV
IC =-50mA, IB =-5mA
-
-950
mV
-
4.5
pF
10
pF
collector-emitter saturation voltage
VBE(sat)
base-emitter saturation voltage
Cobo
Output capacitance
IE=0, VCB=-5V; f =1MHz
Cobi
Input capacitance
IC=0, VEB=-0.5V; f =1MHz
fT
transition frequency
IC=-10mA,VCE=-20V,f=100MHz
250
-
MHz
NF
noise figure
IC=-0.1mA,VCE=-5V,RS=1.0KΩ
f=1.0kHz
-
4
dB
td
delay time
-
35
ns
tr
rise time
-
35
ns
ts
storage time
-
225
ns
tf
fall time
-
75
ns
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VCC=-3V,VBE(off)=0.5V
IC=-10mA IB1=-IB2=-1mA
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
3
MMDT3946
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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4
MMDT3946
PACKAGE OUTLINE
Plastic surface mounted package
SOT-363
A
SOT-363
E
K
B
D
J
G
H
Dim
Min
Max
A
2.00
2.20
B
1.15
1.35
C
0.95 Typical
D
0.25 Typical
E
0.25
0.40
G
0.60
0.70
H
0.02
0.10
J
C
K
0.10 Typical
2.2
2.4
All Dimensions in mm
SOLDERING FOOTPRINT
0.40
0.65
0.65
0.50
Unit : mm
1.90
PACKAGE
INFORMATION
Device
Package
Shipping
MMDT3946
SOT-363
3000/Tape&Reel
www.slkormicro.com
5