BC817-25W

BC817 NPN Transistor 3 Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage 2 1.Base 2.Emitter 3.Collector 1 ■ Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit V VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Thermal Resistance from Junction to Ambient 625 ℃/W RθJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA hFE(1) VCE=1V,IC=100mA 100 VCE=1V,IC=500mA 40 DC current gain hFE(2) 600 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V Base-emitter voltage VBE(ON) VCE=1V,IC= 500mA 1.2 V Transition frequency Collector output capacitance fT Cob VCE=5V,IC=10mA,f=100MHz VCB=10V,f=1MHz 100 MHz 5 pF Classification of hFE (1) Rank BC817-16W BC817-25W BC817-40W Range 100-250 160-400 250-600 Marking www.slkormicro.com 6A 6B 1 6C BC817 Static Characteristic 250 (mA) COMMON EMITTER Ta=25℃ IC hFE 0.48mA 0.40mA 100 0.32mA 0.24mA 50 Ta=25℃ DC CURRENT GAIN 0.56mA 150 100 0.16mA COMMON EMITTER VCE= 1V IB=0.08mA 0 0.0 0.5 1.0 1.5 2.0 2.5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 3.0 10 0.5 3.5 1 10 IC VCEsat 1000 500 100 COLLECTOR CURRENT VCE (V) —— IC (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC Ta=100℃ 0.64mA 600 Ta=25℃ Ta=100 ℃ 300 0.1 1 10 100 COLLECTOR CURREMT IC —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 500 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 500 —— 100 IC 500 (mA) IC (MHz) COMMON EMITTER VCE=1V 100 TRANSITION FREQUENCY 10 T =2 5℃ a T= a 10 0℃ COLLECTOR CURRENT IC fT (mA) —— 0.80mA 0.72mA 200 COLLECTOR CURRENT hFE 1000 1 100 10 COMMON EMITTER VCE= 5V Ta=25℃ 0.1 300 600 900 1 0.69 1200 1 10 1000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ 100 Cob 1 0.1 0.1 —— IC (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE www.slkormicro.com PC 250 f=1MHz IE=0/IC=0 10 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 2 125 100 Ta (℃ ) 150 BC817 ■ SOT-323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 1 0 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 www.slkormicro.com 3