B16WS

B16WS Schottky Barrier Diodes 2 Ƶ Features ƽ Guard ring protection 1.Cathode 2.Anode 1 ƽ Low forward voltage drop ■ Simplified outline(SOD-323) ƽ F or use in low voltage, high frequency inverters ƽ H igh surge current capability Top View ■ Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Symbols B16WS Units Maximum recurrent peak reverse voltage V RRM 60 V Maximum RMS voltage V RMS 42 V V DC 60 V Continuous forward current IF 1 A Maximum DC Reverse Current at Rated DC Blocking Voltage IR 0.1 @VR=60V mA Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) I FSM 10 A Maximum Instantaneous Forward Voltage VF 0.7 @ IF=1.0A V C tot 120 pF Total power dissipation P tot 250 mW Thermal Resistance, Junction to Ambient Air RθJA 400 °C/W Junction Temperature Tj 125 ℃ Storage Temperature T stg -55 ~ +150 ℃ Parameter Maximum DC blocking voltage Total capacitiance www.slkormicro.com VR=4V,f=1MHz 1 B16WS Fig.2 Typical Reverse Characteristics Instaneous Reverse Current I R ( μA) Fig.1 Power Derating Curve Power dissipation (mW) 300 250 200 150 100 50 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 Ambient temperture Ta (°C) 10000 1000 100 T J =25°C 10 1 Junction Capacitance ( pF) INSTANTANEOUS FORWARD CURRENT (mA) T a =25°C 100 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 60 80 150 120 110 100 T a =25°C f=1MHz 0 0.1 INSTANTANEOUS FORWARD VOLTAGE ( V) www.slkormicro.com 40 Fig.4 Typical Junction Capacitance 1000 0 20 10 0 Percent of Rated Peak Reverse Voltage（%） Fig.3 TYPICAL FORWARD VOLTAGE T a =100°C T J =100°C 1 10 Reverse Voltage (V) 2 100 B16WS ■ SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° mil ■ The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) www.slkormicro.com 3 8