B5819WT

B5819WT Schottky Barrier Diode 2 FEATURES z Low forward voltage drop. z Guard ring construction for transient protection. z Low reverse recovery time. z 1 Low reverse capacitance. 1.Cathode 2.Anode ■ Simplified outline(SOD-523) Top View APPLICATIONS z Schottky barrier application. MAXIMUM RATING @ Ta=25°C unless otherwise specified Parameter Symbol Limits Unit DC Reverse voltage VR 40 V Continuous forward current IF 350 mA Repetitive peak forward current @t≤1.0s IFRM 1 A Total power dissipation Ptot 400 mW Total resistance junction to ambient RθJA 300 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -65-125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Parameter Symbol Min. Reverse breakdown voltage V(BR)R 40 Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr www.slkormicro.com Typ. Unit Conditions V IR=100μA 0.37 0.60 V IF=20mA IF=200mA 5.0 μA VR=30V 50 pF VR=0V,f=1MHz 10 ns IF=IR=50mA,RL=100Ω 1 Max. B5819WT TYPICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified www.slkormicro.com 2 B5819WT ■ SOD-523 A c v M A HE A D 1 E 2 bp (1) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E HE v mm 0.7 0.5 0.35 0.25 0.2 0.1 1.3 1.1 0.9 0.7 1.7 1.5 0.15 Note 1. The marking bar indicates the cathode. www.slkormicro.com 3