1N4001W

1N4001W-1N4007W SUR FACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES SOD-123FL Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.8± 0.1 １．０±0.2 Cathode Band Top View 1.3± 0.15 0.10-0.30 2.8±0.1 0.6±0.25 MECHANICAL DATA 3.7±0.2 Dimensions in millimeters Case: JEDEC SOD-123FL molded plastic body over passivated chip Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=25 C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS VRRM VRMS VDC 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 W W W W W W W 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 1000 700 1000 VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 25.0 Amps VF 1.1 Volts IR 10.0 50.0 µA CJ RθJA TJ,TSTG 4 180 -55 to +150 pF K/W C Note: 1.Averaged over any 20ms period. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted www.slkormicro.com 800 560 800 UNITS 1 1N4001W-1N4007W FIG.2 -- TYPICAL JUNCTION CAPACITANCE 10 TJ = 150°C TJ = 25°C m AMPERES 9 CAPACITANCE, pF 1000 TJ = 100°C 8 7 6 5 4 3 2 1 100 600 700 800 900 1000 0 1100 INSTANTANEOUS FORWARD VOLTAGE,mV AVERAGE FORWARD CURRENT, AMPERES TJ = 150°C TJ = 125°C TJ = 100°C 1 TJ = 75°C TJ = 50°C 0.1 TJ = 25°C 0.01 0 100 200 300 400 500 600 700 800 900 INSTANTANEOUS REVERSE VOLTAGE,V www.slkormicro.com 5 10 15 20 25 30 35 40 FIG.4 -- FORWARD DERATING CURVE 100 10 0 REVERSE VOLTAGE,VOLTS FIG.3 -- TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS µ AMPERES INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT FIG.1 --TYPICAL FORWARD CHARACTERISTIC 2 1.2 Resistive or Inductive Load 1.0 0.8 0.6 0.4 0.2 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, 160