SM480T9RL

H N03H 30V /25A Single N Power MOSFET SM480T9RL 30V /25A Single N Power MOSFET N V General Description 30V /25A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation SM480T9RL TO-252 25N03 2500 Parameter 25N03H 30 V 23.1 mΩ 36.3 mΩ 25 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 40.0 IAR 8.0 EAR 18.4 TA=25°C A A mJ 21 PD TA=70°C Junction and Storage Temperature Range 18.0 IDM G Repetitive avalanche energy L=0.1mH 25.0 ID W 11 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 82 123 °C/W 165 198 °C/W 49 79 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage 30V /25A Single N Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM480T9RL Typ Max 30 Units V 1 5 uA ±100 nA 2 2.6 V VGS=10V, ID=20A 23.1 33.0 VGS=4.5V, ID=20A 36.3 47.2 Forward Transconductance VDS=5V, ID=20A 47 Diode Forward Voltage IS=1A,VGS=102V 0.72 1.3 mΩ S 1 V 25 A Typ Max Units 373 455 pF 67 82 pF 41 48 pF 0.8 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.6 tD(on) Turn-On DelayTime 5.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 3.5 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 1.75 1.12 4.2 14.7 nC ns 4.725 IF=-8A, dI/dt=500A/µs 10.5 ns IF=18A, dI/dt=500A/µs 4.5 nC 2 www.sourcechips.com 30V /25A Single N Power MOSFET V01 3 www.sourcechips.com SM480T9RL 30V /25A Single N Power MOSFET V01 4 www.sourcechips.com SM480T9RL