SM3402SRL

B N03B 30V /4A Single N Power MOSFET SM3402SRL 30V /4A Single N Power MOSFET N V General Description 30V /4A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation SM3402SRL SOT23-3 4N03 3000 Parameter 4N03B 30 V 45.5 mΩ 71.5 mΩ 4 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 6.4 IAR 1.3 EAR 2.9 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range 3.2 IDM G Repetitive avalanche energy L=0.1mH 4.0 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 162 243 °C/W 325 390 °C/W 97 156 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage 30V /4A Single N Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM3402SRL Typ Max 30 Units V 1 5 uA ±100 nA 1.1 1.5 V VGS=-10V, ID=4A 45.5 65.0 VGS=4.5V, ID=4A 71.5 93.0 Forward Transconductance VDS=5V, ID=4A 70 Diode Forward Voltage IS=1A,VGS=5V 0.72 0.8 mΩ S 1 V 4 A Typ Max Units 235 286 pF 35 43 pF 18 21 pF 0.8 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 1.6 tD(on) Turn-On DelayTime 4.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 4.7 VGS=10V, VDS=15V, ID=4A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 2.35 1.12 3.4 11.9 nC ns 3.825 IF=-8A, dI/dt=500A/µs 8.5 ns IF=18A, dI/dt=500A/µs 2.6 nC 2 www.sourcechips.com 30V /4A Single N Power MOSFET V01 3 www.sourcechips.com SM3402SRL 30V /4A Single N Power MOSFET V01 4 www.sourcechips.com SM3402SRL