SM6442D1RL

D N04D 40V /32A Single N Power MOSFET SM6442D1RL 40V /32A Single N Power MOSFET N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 40V /32A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation SM6442D1RL DFN5x6 6422 3000 Parameter 32N04D 40 V 8.0 mΩ 11.0 mΩ 32 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 51.2 IAR 10.2 EAR 23.6 TA=25°C A A mJ 35.7 PD TA=70°C Junction and Storage Temperature Range 25.0 IDM G Repetitive avalanche energy L=0.1mH 32.0 ID W 14 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 17 26 °C/W 35 42 °C/W 10 16 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage 40V /32A Single N Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM6442D1RL Typ Max 40 Units V 1 5 uA ±100 nA 1.8 2.4 V VGS=10V, ID=20A 8.0 10.0 VGS=4.5V, ID=20A 11.0 14.3 Forward Transconductance VDS=5V, ID=20A 68 Diode Forward Voltage IS=1A,VGS=123V 0.72 1.2 mΩ S 1 V 32 A Typ Max Units 1830 2232 pF 521 640 pF 43 51 pF 3 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 6 tD(on) Turn-On DelayTime 8.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 12.8 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 6.4 4.2 6.6 23.1 nC ns 7.425 IF=-8A, dI/dt=500A/µs 16.5 ns IF=18A, dI/dt=500A/µs 40 nC 2 www.sourcechips.com 40V /32A Single N Power MOSFET V01 3 www.sourcechips.com SM6442D1RL 40V /32A Single N Power MOSFET V01 4 www.sourcechips.com SM6442D1RL