HX2301A

SOT-23 Plastic-Encapsulate Transistors HX2301A MOSFET(P-Channel) FEATURES PWM applications Load switch Power management MARKING: A1SHB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage ±12 V ID Drain current -2.5 A PD Power Dissipation 0.9 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=-250 uA -0.4 Gate-body Leakage IGSS VDS=0V, VGS=±12V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V Drain-Source On-Resistance rDS(ON) TYP MAX UNIT V -0.7 -1 V ±100 nA -1 uA VGS=-4.5V, ID =-2.5A 95 130 mΩ VGS=-2.5V, ID=-1A 100 150 mΩ Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V, VGS=0V, f=1MHz 325 pF 55 35 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=-10V, ID=-1A, VGS=-4.5V RGEN=-60ohm RL=10ohm VDS=-10V, ID=-1A , VGS=-4.5V, 10 nS 6 nS 22 nS 8 nS 3 nC 0.7 nC 0.8 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is VGS=0V, ID=-1.25A -1.2 V -2.5 A 1