2N3906U

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES z Compliment to 2N3904U z Low current z Low voltage MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 Units V VCEO Collector-Emitter Voltage -40 V V VEBO Emitter-Base Voltage -6 IC Collector Current -Continuous -0.2 A PC 0.5 W 250 ℃/W TJ Collector Power Dissipation Thermal resistance from junction to ambient Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA -0.05 μA -0.05 μA Emitter cut-off current EBO VEB=-6V,IC=0 Collector ut-off current ICEX VCB=-30V,VBE(off)=-3V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V fT VCE=-20V,IC=-10mA,f=100MHz -0.65 300 250 MHz Collector capacitance Cc VCB=-5V,IE=0,f=1MHz 4.5 pF Emitter capacitance Ce VEB=-0.5V,IC=0,f=1MHz 10 pF Noise figure NF 4 dB VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ Delay time td 35 nS Rise time tr 35 nS Storage time tS 225 nS Fall time tf 75 nS IC=-10mA , IB1=-IB2= -1mA 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Static Characteristic -18 -72uA -56uA -48uA -9 -40uA -32uA -6 IC COMMON EMITTER VCE=-1V Ta=25℃ hFE -64uA -12 —— Ta=100℃ DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -80uA -15 hFE 300 COMMON EMITTER Ta=25℃ -24uA 200 100 -16uA -3 IB=-8uA -0 -0.0 -0.5 -1.0 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC Ta=100℃ Ta=25℃ -100 -30 IC —— Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 β=10 -10 -10 -0.0 IC -200 IC -1 -10 -3 (mA) COLLECTOR CURRENT —— VBE Cob/ Cib 9 -100 -30 —— IC -200 (mA) VCB/ VEB COMMON EMITTER VCE=-1V -100 f=1MHz IE=0/IC=0 Ta=25℃ Cob (pF) -30 IC Ta=100℃ Cib C -10 CAPACITANCE (mA) -200 -100 -30 COLLECTOR CURRENT COLLECTOR CURRENT -200 (mA) -300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -600 VCE 0 -0.1 -2.5 -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.6 -0.4 -0.8 -1.0 -1.2 1 -0.1 -1.4 fT 1000 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) Pc 600 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 300 100 -1 -3 -30 -10 COLLECTOR CURRENT IC 500 400 300 200 100 0 -80 0 (mA) 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 150 SOT-89 PACKAGE OUTLINE 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.