SD103ADW

Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOT-363 FEATURES Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Fast Switching z Low Leakage Current z 6 5 4 1 2 3 MARKING: KLL KLL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Limit Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Unit VRRM VRWM VR 40 V VR(RMS) 28 V Forw ard Continuous Current IFM 350 mA Average Rectified Current IO 175 mA Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 2 Power Dissipation Pd 200 mW RθJA 500 ℃/W Tj 125 ℃ RMS Reverse Voltage Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature TSTG A ℃ -55~+150 Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Symbol Min V (BR) 40 Typ Max Unit V 0.37 0.50 V Forward voltage VF Reverse current IR Capacitance between terminals CT 50 pF trr 10 ns Reverse recovery time 2.0 5.0 μA Conditions IR=100μA IF=20mA IF=100mA VR=10V VR=30V VR=0V,f=1.0MHz IF=IR=200mA Irr=0.1XIR,RL=100Ω 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics Forward Characteristics (uA) (mA) o T= a 25 10 C T= a 1 00 FORWARD CURRENT o C REVERSE CURRENT IR IF 100 1 Characteristics Reverse 1000 1000 o Ta=100 C 100 10 o Ta=25 C 1 0.1 0.1 0 100 200 300 400 500 FORWARD VOLTAGE 600 VF 700 0 800 (mV) 5 10 15 20 25 REVERSE VOLTAGE 30 VR 35 40 (V) Power Derating Curve Capacitance Characteristics 100 250 o 200 PD (mW) f=1MHz POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25 C 10 150 100 50 0 1 0 5 10 REVERSE VOLTAGE 15 VR 0 20 25 50 75 100 AMBIENT TEMPERATURE (V) 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Ta o ( C) 125 SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.