BAS70T

SOT-523 Plastic-Encapsulate Diodes BAS70T/-04T/-05T/06T SCHOTTKY BARRIER DIODE SOT-523 FEATURES  Low Turn-on Voltage  Fast Switching BAS70T Marking: 7C BAS70-04TMarking:7D BAS70-05TMarking:7E BAS70-06T Marking: 7F MARKING: BAS70T BAS70-04T BAS70-05T BAS70-06T Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRRM VRWM VR 70 V Forward Continuous Current IFM 70 mA Non-Repetitive Peak Forward Surge Current @ t = 8.3ms IFSM 100 mA Power Dissipation PD 150 mW RθJA 667 ℃/W Junction temperature TJ 125 ℃ Storage Temperature TSTG Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Thermal Resistance Junction to Ambient ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol V(BR) Test conditions IR=10µA Min Max 70 Unit V Reverse voltage leakag e current IR VR=50V 100 nA Forward voltage VF IF=1mA IF=15mA 410 1000 mV Diode capacitance CD Reveres recovery time trr VR=0, f=1MHz IF=IR=10mA,Irr=0.1xIR, RL=100Ω 1 2 5 pF ns Typical Characteristics Forward 70 Characteristics Reverse 10000 Pulsed Pulsed F (nA) (mA) T =100 ℃ a 1000 REVERSE CURRENT I R I FORWARD CURRENT Characteristics 10 1 200 400 600 FORWARD VOLTAGE 800 VF T =25 ℃ a 10 1 1000 0 14 (mV) 28 42 REVERSE VOLTAGE Capacitance Characteristics 2.4 100 56 VR 70 (V) Power Derating Curve 200 Ta=25℃ 150 POWER DISSIPATION P (mW) 1.6 D CAPACITANCE BETWEEN TERMINALS CT(pF) f=1MHz 2.0 1.2 0.8 100 50 0.4 0.0 0 5 10 REVERSE VOLTAGE V 15 R 0 20 0 25 50 75 AMBIENT TEMPERATURE T (V) 2 100 a (℃) 125 150 ons 3