BAS16W

Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage 3 • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: A6 SOT-323 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 155 mA IFRM 500 4.5 1 0.5 mA Ptot 200 mW Tj 150 O C Tstg - 65 to + 150 O C Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 ms t=1s Power Dissipation IFSM Junction Temperature Storage Temperature Range A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF - 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR - 30 1 30 50 nA µA µA µA V(BR)R 75 - V Diode Capacitance at VR = 0 , f = 1 MHz Cd - 1.5 pF Reverse Recovery Time at IF = IR = 10 mA, RL = 50 Ω trr - 4 ns Reverse Breakdown Voltage at IR = 100 µA 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.