2N7002KDW

Plastic-Encapsulate MOSFETS N-channel MOSFET RDS(on)MAX V(BR)DSS SOT-363 ID 6 60 V 5.3Ω@4.5V     5Ω@10V  300mA 5 4 1 2 3 FEATURE APPLICATION High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected z z z z z z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MARKING 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 60 V VGS Gate-Source voltage ±20 V ID Drain Current 300 mA PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 833 ℃ /W MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID =250µA 60 VGS(th) VDS =VGS, ID =1mA 1 Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V Gate –Source leakage current IGSS1 VGS =±20V, VDS = 0V Drain-Source On-Resistance* RDS(on) Gate Threshold Voltage* VDS V 1.3 2.5 V 1 µA ±10 µA VGS = 4.5V, ID =200mA 1.1 5.3 Ω VGS =10V,ID =500mA 0.9 5 Ω 1.5 V Diode Forward Voltage VSD VGS=0V, IS=300mA Recovered charge Qr VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs 30 nC Dynamic Characteristics** Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz 40 pF 30 pF 10 pF 10 ns 15 ns Switching Characteristics** Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse recovery Time trr VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µs 30 ns GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) ±21.5 Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. **These parameters have no way to verify. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. ±30 V Output Characteristics Transfer Characteristics 1.2 1.2 Ta=25℃ VDS=3V VGS=5V,6V,7V,10V Pulsed Pulsed (A) (A) VGS=4V DRAIN CURRENT DRAIN CURRENT ID ID 0.8 VGS=3V 0.4 0.8 Ta=100℃ Ta=25℃ 0.4 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 (V) 2 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) —— VGS RDS(ON) —— ID 10 5 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 ( ) RDS(ON) 3 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( ) 4 2 VGS=4.5V ID=500mA 6 4 2 1 VGS=10V 0 0 0 300 600 900 DRAIN CURRENT ID 1200 0 1500 (mA) 2 4 8 VGS 10 (V) Threshold Voltage IS —— VSD 2 1 6 GATE TO SOURCE VOLTAGE 1.8 Pulsed VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.6 Ta=25℃ 0.01 1.4 ID=250uA 1.2 1.0 0.8 0.6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 0.4 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 100 Tj 125 ( ℃) 2 of 3 a Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. SOT-363-Package Outline Dimensions 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.