S9012W

S9012W/SOT323 TRANSISTOR (PNP) • FEATURES Complementary to S9013T Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC= -100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC current gain hFE VCE=-1V, IC= -50mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT Collector output capacitance Cob VCE=-6V, conditions IC= -20mA f=30MHz VCB=-10V, IE=0, f=1MHz 1 MIN 120 TYP MAX UNIT 400 150 MHz 5 pF Typical Characteristics S9012W 2 SOT-323 Package Outline Dimensions 3