S9013W

SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V 1. BASE 2. EMITTER 3. COLLECTOR IC Collector Current 500 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 100 nA Collector cut-off current ICEO VCE=20V, IB=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=50mA 120 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V VCE=1V, IC=10mA 0.7 V Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob VCE=6V,IC=20mA , f=30MHz 150 MHz VCB=6V, IE=0, f=1MHz 8 pF CLASSIFICATION OF hFE RANK L H J RANGE 120–200 200–350 300–400 MARKING Page 1 of 3 J3 3/25/2019 Typical Characteristics Page 2 of 3 S9013W 3/25/2019 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Page 3 of 3 Dimensions In Millimeters Max. Min. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8° 3/25/2019