BAS316WS

Silicon Epitaxial Planar Switching Diode PINNING Applications • High-speed switching DESCRIPTION Cathode PIN 1 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 100 V Reverse Voltage VR 100 V Continuous Forward Current IF 250 mA IFRM 500 mA IFSM 4 1 0.5 A Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O Symbol Max. Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1 µs t = 1 ms t=1s Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω 0.715 0.855 1 1.25 C C Unit V 30 1 30 50 nA µA µA µA Ctot 1.5 pF trr 4 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.