2SK3018W

Plastic-Encapsulate MOSFETS N-channel MOSFET FEATURES  Low on-resistance  Fast switching speed  Low voltage drive makes this device ideal for portable equipment  Easily designed drive circuits  Easy to parallel SOT-323 3 1 2 1. GATE 2. SOURCE 3. DRAIN Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Units Drain-Source voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance from Junction to Ambient Symbol Parameter VDS 625 ℃ /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Off Characteristics Symbol Test Condition Min Typ Max Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 µA Gate –Source leakage current IGSS VGS =±20V, VDS = 0V ±2 uA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 1.5 V Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 30 Units V 0.8 mS 20 Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf *These parameters have no way to verify 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics Output Characteristics Transfer Characteristics 0.20 Ta=25℃ V =3.0V 4.0V Pulsed 200 GS 100 3.5V 0.15 10 VGS =2.5V 0.10 0.05 DRAIN CURRENT DRAIN CURRENT I D ID (A) (mA) 30 VGS =2.0V 3 1 VDS =3V 0.3 Ta=25℃ VGS =1.5V 0.00 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE R DS(ON) 60 V DS Pulsed 0.1 5 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 V GS RDS(ON) —— VGS ——ID 15 Ta=25℃ Ta=25℃ (Ω R ON-RESISTANCE ON-RESISTANCE 10 DS(ON) 40 RDS(ON) (Ω ) Pulsed ) Pulsed 20 ID=100mA 5 ID=50mA VGS = 2.5V 0 VGS = 4V 1 10 3 I —— V S 200 100 100 30 DRAIN CURRENT ID 0 200 (mA) 0 5 10 GATE TO SOURCE VOLTAGE 15 V GS SD VGS =0V Ta=25℃ IS (mA) Pulsed SOURCE CURRENT 4 (V) 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. (V) 20 SOT-323 Package Outline Dimensions 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.