1N4448W

Silicon Epitaxial Planar Switching Diode Fast Switching Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W1 Top View Marking Code: "W1" Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 80 V IF(AV) 150 mA Forward Continuous Current IFM 300 mA Non-Repetitive Peak Forward Surge Current (at t = 1 µs) IFSM 4 A Power Dissipation Pd 400 mW Junction Temperature Tj 150 O Tstg - 65 to + 150 O Average Rectified Forward Current Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Max. Unit VF 0.62 - 0.72 0.855 1 1.25 V - 100 25 50 30 nA nA µA µA V(BR)R 80 - V Ctot - 4 pF trr - 4 ns IR Total Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.