1N914W

Silicon Epitaxial Planar Switching Diode PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 W1 Top View Marking Code: " W1" or "WJ" Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA IFSM A Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Power Dissipation Ptot 1 2 400 Thermal Resistance from Junction to Ambient Air RθJA 312 Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range mW C/W O C C Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 10 mA Reverse Breakdown Voltage at IR = 5 µA at IR = 100 µA Reverse Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω Symbol Min. Max. Unit VF - 1 V V(BR)R V(BR)R 75 100 - V V IR - 25 5 50 nA µA µA Ctot - 4 pF trr - 50 ns 1 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 2 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.