SWITCHING DIODES
Maximum Ratings @TA=25℃
Para
Symbol
Limits
Unit
Non-Repetitive Peak reverse
VRM
85
V
DC Blocking
VR
80
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Power Dissipation
PD
150
mW
Junction temperature
TJ
125
℃
TSTG
-55-125
℃
Voltage
Storage temperature range
Electrical Characteristics @T A=25℃
Para
Reverse Breakdown Voltage
Forward voltage
Reverse current
Symbol
V
(BR)R
Min.
Typ.
Max.
80
Unit
Conditions
V
IR=100μA
VF1
0.61
V
IF=1mA
VF2
0.74
V
IF=10mA
VF3
0.92
1.2
V
IF=100mA
IR1
0.1
uA
VR=30V
IR2
0.5
uA
VR=80V
Capacitance between terminals
CT
2.2
4.0
pF
VR=0,f=1MHz
Reverse recovery time
t
1.6
4.0
ns
IF=IR=10mA,Irr=0.1×IR
rr
1 of 3
Copyright © All right reserved
Heyuan China Base Electronics Technology Co., Ltd.
2 of 3
Copyright © All right reserved
Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
3 of 3
Copyright © All right reserved
Heyuan China Base Electronics Technology Co., Ltd.
很抱歉,暂时无法提供与“1SS187”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 10+0.04160
- 50+0.03848
- 200+0.03588
- 600+0.03328
- 1500+0.03120
- 3000+0.02990