1N914WT

    Silicon Epitaxial Planar Switching Diode PINNING Features • Fast switching speed • Ultra-small surface mount package • For general purpose switching applications DESCRIPTION PIN 1 Cathode 2 Anode 2     A     Absolute Maximum Ratings (Ta = 25 OC) Parameter     1     Top View Marking Code: "A" Simplified outline SOD-523 and symbol Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA Non-repetitive Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 ìs IFSM 0.5 1 Power Dissipation Ptot 150 Thermal Resistance Junction to Ambient RèJA 833 Tj 150 O Tstg - 55 to + 150 O   Junction Temperature Storage Temperature Range   A   mW C/W O C C Electrical Characteristics (Ta = 25 OC) Parameter Symbol Min. VR 75 100 Forward Voltage at IF = 10 mA VF - Reverse Current at VR = 20 V at VR = 75 V IR - Ctot - Breakdown Voltage at IR = 5 µA at IR = 100 µA   Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr       Diode Capacitance at VR = 0 V, f = 1 MHz   Max. Unit - V V 1 V 25 5 nA µA 4 pF 4 ns           -   1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.       2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.     PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.