BC846BW

NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage BC846W BC847W BC848W BC849W BC850W VCEO 65 45 30 30 45 V Emitter Base Voltage BC846W BC847W BC848W BC849W BC850W VEBO 6 6 5 5 5 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Total Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range 1 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA BC846AW~BC850AW BC846BW~BC850BW BC846CW~BC850CW Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - 80 50 30 30 50 - 65 45 30 30 45 - 6 6 5 5 5 - ICBO - 15 nA IEBO - 100 nA VCE(sat) - 0.25 0.6 V VBE 0.58 - 0.7 0.77 V fT 100 - MHz Cob - 4.5 pF Collector Base Voltage at IC = 10 µA BC846W BC847W BC848W BC849W BC850W VCBO V Collector Emitter Voltage at IC = 10 mA BC846W BC847W BC848W BC849W BC850W VCEO V Emitter Base Voltage at IE = 1 µA BC846W BC847W BC848W BC849W BC850W Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base Emitter Voltage at VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz VEBO 2 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. V 3 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 4 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd. 5 of 5 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.