BC847DW

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) SOT-363 APPLICATION This device is designed for general purpose amplifier applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Parameter VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage Unit V 6 IC Collector Current-Continuous 100 mA PD Power Dissipation 200 mW Thermal Resistance. Junction to Ambient 625 ℃/W Junction Temperature 150 RθJA Tj Tstg Storage Temperature Range -55~+150 MARKING:BC847ADW 1Et BC847BDW 1Ft BC847CDW 1Gt 　 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 Emitter cut-off current IEBO VEB =4V, IC=0 15 DC current gain* hFE VCE=5V,IC=2mA Base-emitter voltage Min Typ A 110 220 B 200 450 C 420 800 nA VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V VCE(sat)(2) IC=100mA,IB=5mA 0.65 V 0.7 V 0.77 V VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA fT Transition frequency Collector output capacitance conditions Unit Symbol Collector-emitter saturation voltage Test Max Parameter Cob VCE=5V,IC=20mA ,f=100MHz VCB=10V,IE=0,f=1MHz 0.58 200 MHz 2 pF *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. 1 of 2 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd. SOT-363-Package Outline Dimensions Dimension in Millimeters Symbol Min Max A 0.90 1.00 A1 0.010 0.100 B 1.20 1.40 bp 0.25 0.45 C 0.09 0.15 D 2.00 2.20 E 1.15 1.35 HE 2.15 2.55 Lp 0.25 0.46 θ 0º 6º 2 of 2 Copyright © All right reserved Heyuan China Base Electronics Technology Co., Ltd.