BAV21W

Silicon Epitaxial Planar Diodes High Voltage Switching Diodes BAS19W BAS20W BAS21W 3 BAS21AW 3 BAS21SW 3 BAS21CW 3 SOT-323 Plastic Package 1 2 1 2 1 2 1 Marking Code: BAS19W~BAS21W: T3 BAS21AW: F2 BAS21CW: F3 BAS21SW: F4 2 Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit VR 120 200 250 V Continuous Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 625 mA IFSM 0.5 2.5 A Total Device Dissipation Ptot 250 mW Thermal Resistance Junction to Ambient RθJA 357 ℃/W Tj, Tstg - 55 to + 150 ℃ Reverse Voltage BAS19W BAS20W BAS21W Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Junction and Storage Temperature Range Characteristics at Ta = 25℃ Parameter Reverse Breakdown Voltage at IR = 100 µA at IR = 100 µA at IR = 100 µA Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150℃ at VR = 150 V, Tj = 150℃ at VR = 200 V, Tj = 150℃ Total Capacitance at VR = 0, f = 1 MHz Min. Max. 120 200 250 - - 1 1.25 - 0.1 0.1 0.1 100 100 100 Ctot - 5 pF trr - 50 ns Symbol BAS19W BAS20W BAS21W V(BR)R VF BAS19W BAS20W BAS21W BAS19W BAS20W BAS21W Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω IR 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Unit V V µA 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.