BAV21WS

Silicon Epitaxial Planar Diodes High Voltage Switching Diode Features • Fast switching speed • Surface mount package ideally suited for automatic insertion MARKING PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 BAV19WS BAV20WS BAV21WS JX T2 T3 Top View Marking Code: Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Symbol BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS Value Unit IF(AV) 120 200 250 100 150 200 200 mA Forward Continuous Current IFM 400 mA Repetitive Peak Forward Current IFRM 625 mA Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current at t = 1 µs at t = 1 s Power Dissipation Operating and Storage Temperature Range Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 μA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V Forward Voltage at IF = 100 mA at IF = 200 mA Total Capacitance at VR = 0, f = 1 MHz VRRM VR BAV19WS BAV20WS BAV21WS Reverse Recovery Time at IF = IR = 30 mA, IRR = 0.1 X IR, RL = 100 Ω V Ptot 2.5 0.5 200 Tj, Tstg - 65 to + 150 IFSM Symbol BAV19WS BAV20WS BAV21WS V A mW C O Min. Max. 120 200 250 - - 100 100 100 VF - 1 1.25 V CT - 5 pF trr - 50 ns V(BR)R IR 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Unit V nA 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.